Description

IGBT 1200V TO-3P(LH); DC Collector Current:25A; Collector Emitter Saturation Voltage Vce(on):2.7V; Power Dissipation Pd:200W; Collector Emitter Voltage V(br)ceo:1.2kV; Transistor Case Style:TO-3P; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:-; Current Ic Continuous a Max:25A; Fall Time Typ:160ns; Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +150°C; Power Dissipation Max:200W; Pulsed Current Icm:50A; Rise Time:100ns; Termination Type:Through Hole; Transistor Polarity:N Channel; Transistor Type:IGBT; Voltage Vces:1.2kV