Toshiba N-Channel MOSFET, 90 A, 30 V, 8-Pin TSON TPN2R703NL, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 4.1 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 2.3V, Minimum Gate Threshold Voltage: 1.3V, Maximum Power Dissipation: 42 W, Transistor Configuration: Single, Maximum Gate Source Voltage: ±20 V, Forward Diode Voltage: 1.2V

Toshiba AC Input Phototransistor Output Optocoupler, Surface Mount, 4-Pin SO6, Maximum Forward Voltage: 1.4V, Typical Rise Time: 2µs, Maximum Input Current: ±1 A, Isolation Voltage: 3750 Vrms, Maximum Current Transfer Ratio: 600%, Typical Fall Time: 3µs, MPN: TLP182(GB,E(T

MOSFET P-Ch Sm Sig FET Id -0.8A -20V -8VGSS

Counter ICs CONV-DIP,DISCON(07-10)/PHASE-OUT(10-01)/OBSOLETE(10-04),