Toshiba Dual Switching Diode, 2x Series Pair, 300mA 85V, 3-Pin USM 1SS302A,LF(T, Mounting Type: Surface Mount, Diode Technology: Silicon Junction, Maximum Diode Capacitance: 3pF, Maximum Operating Temperature: +150 °C, Length: 2mm, Width: 1.25mm, Height: 0.85mm, Dimensions: 2 x 1.25 x 0.85mm, Automotive Standard: AEC-Q101

Toshiba N-Channel MOSFET, 9.7 A, 600 V, 3-Pin TO-220SIS TK10A60W5,S5VX(M, Mounting Type: Through Hole, Maximum Drain Source Resistance: 450 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 3.7V, Maximum Power Dissipation: 30 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Forward Diode Voltage: 1.7V, Height: 15mm

Toshiba N-Channel MOSFET, 92 A, 40 V, 8-Pin TSON TPN3R704PL, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 6 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 2.4V, Minimum Gate Threshold Voltage: 1.4V, Maximum Power Dissipation: 86 W, Transistor Configuration: Single, Maximum Gate Source Voltage: ±20 V, Forward Diode Voltage: 1.2V

Toshiba N-Channel MOSFET, 92 A, 100 V, 8-Pin DSOP TPW4R50ANH, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 4.5 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 142 W, Transistor Configuration: Single, Maximum Gate Source Voltage: ±20 V, Forward Diode Voltage: 1.2V

Toshiba Photo IC Output Optocoupler, Surface Mount, 16-Pin SO-16L, Maximum Forward Voltage: 1.8V, Typical Rise Time: 32ns, Maximum Input Current: 3.5 mA, Isolation Voltage: 5000 Vrms, Typical Fall Time: 18ns, Series: TLP 5214, Special Features: AC And Brushless DC Motor Drives, Ideal for isolated IGBT/Power MOSFET Gate Drive, Industrial Inverters And Uninterruptible Power Supply, TLP5214 is Highly Integrated 40A Output Current IGBT Gate Drive Photo-Coupler Housed In Long Cree Page And Clearance, MPN: TLP5214(D4,E(O

Toshiba 45V 300mA, Schottky Diode, 2-Pin USC CUS357,H3F(T, Mounting Type: Surface Mount, Diode Configuration: Single, Number of Elements per Chip: 1, Peak Non-Repetitive Forward Surge Current: 1A

Toshiba DC Input Phototransistor Output Optocoupler, Surface Mount, 4-Pin SO4, Maximum Forward Voltage: 1.4V, Typical Rise Time: 2µs, Maximum Input Current: 50 mA, Isolation Voltage: 3750 Vrms, Maximum Current Transfer Ratio: 600%, Typical Fall Time: 3µs, Series: TLP 293, Special Features: Suitable for High-Density Surface Mounting Applications Such as Small Switching Power Supplies And Programmable Controllers, TLP293 Consists of a Low Input Type Photo Transistor Optically Coupled to an InGaAs Infrared Emitting Diode, Very Small And Thin C, MPN: TLP293(GB,E(T

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Toshiba N-Channel MOSFET, 55 A, 100 V, 3-Pin DPAK TK55S10N1, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 6.5 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 157 W, Transistor Configuration: Single, Maximum Gate Source Voltage: ±20 V, Automotive Standard: AEC-Q101

Toshiba N-Channel MOSFET, 150 A, 45 V, 8-Pin SOP TPH1R005PL, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 1.7 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 2.4V, Minimum Gate Threshold Voltage: 1.4V, Maximum Power Dissipation: 170 W, Transistor Configuration: Single, Maximum Gate Source Voltage: ±20 V, Forward Diode Voltage: 1.2V

Toshiba TC74LCX541FK(EL,K) Octal Bus Buffer, 20-Pin VSSOP, Mounting Type: Surface Mount, Maximum High Level Output Current: -24mA, Maximum Propagation Delay Time @ Maximum CL: 7.5 ns @ 2.7 V, Dimensions: 5 x 3 x 0.8mm, Length: 5mm, Maximum Operating Supply Voltage: 3.6 V, Maximum Operating Temperature: +85 °C, Minimum Operating Supply Voltage: 1.65 V, Minimum Operating Temperature: -40 °C, Propagation Delay Test Condition: 50pF

Toshiba 2SA1163-GR(TE85L,F PNP Transistor, 100 mA, 120 V, 3-Pin SOT-346, Package Type: SOT-346 (SC-59), Mounting Type: Surface Mount, Maximum Power Dissipation: 150 mW, Transistor Configuration: Single, Maximum Collector Base Voltage: -120 V, Maximum Emitter Base Voltage: -5 V, Dimensions: 2.9 x 1.5 x 1.1mm, Maximum Collector Emitter Saturation Voltage: -0.3 V, Maximum Operating Temperature: +125 °C

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