Toshiba N-Channel MOSFET, 29 A, 150 V, 8-Pin SOP TPH3300CNH, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 33 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 57 W, Transistor Configuration: Single, Maximum Gate Source Voltage: ±20 V, Forward Diode Voltage: 1.2V

Toshiba N-Channel MOSFET, 300 A, 30 V, 8-Pin DSOP TPWR8503NL, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 1.3 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 2.3V, Minimum Gate Threshold Voltage: 1.3V, Maximum Power Dissipation: 142 W, Transistor Configuration: Single, Maximum Gate Source Voltage: ±20 V, Forward Diode Voltage: 1.2V

Toshiba TBD62003AFWG(Z,EHZ 7 Power Switch IC 16-Pin, P-SOP, Switch On Resistance: 3.25Ω, Maximum Operating Supply Voltage: 25 V, Maximum Operating Current: 0.1mA, Power Rating: 1.47W, Mounting Type: Surface Mount, Maximum Operating Temperature: +85 °C, Minimum Operating Temperature: -40 °C, Dimensions: 10.1 x 4.04 x 1.55mm

Toshiba N-Channel MOSFET, 90 A, 30 V, 8-Pin TSON TPN2R703NL, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 4.1 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 2.3V, Minimum Gate Threshold Voltage: 1.3V, Maximum Power Dissipation: 42 W, Transistor Configuration: Single, Maximum Gate Source Voltage: ±20 V, Forward Diode Voltage: 1.2V

Toshiba Silicon N-Channel MOSFET, 150 A, 30 V, 8-Pin SOP TPHR6503PL,L1Q(M

Toshiba Silicon N-Channel MOSFET, 30 A, 650 V, 3-Pin TO-220SIS TK090A65Z,S4X(S, Maximum Drain Source Resistance: 0.09 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Number of Elements per Chip: 1

Toshiba DF5A5.6FU(TE85L,F), Quad-Element ESD Protection Diode, 5-Pin USV, Diode Configuration: Common Anode, Mounting Type: Surface Mount, Number of Elements per Chip: 4, Minimum Operating Temperature: -55 °C, Maximum Operating Temperature: +125 °C, Dimensions: 2 x 1.25 x 0.9mm, Length: 2mm, Maximum Reverse Leakage Current: 1µA, Test Current: 5mA, Width: 1.25mm

Toshiba N-Channel MOSFET Transistor, 207 A, 100 V, 3-Pin TO-220SIS TK100A10N1,S4X(S, Mounting Type: Through Hole, Maximum Drain Source Resistance: 3.8 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Maximum Power Dissipation: 45 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Forward Diode Voltage: 1.2V, Height: 15mm

Toshiba N-Channel MOSFET, 136 A, 100 V, 3-Pin D2PAK TK65G10N1, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 4.5 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 156 W, Transistor Configuration: Single, Maximum Gate Source Voltage: ±20 V, Forward Diode Voltage: 1.2V

Toshiba N-Channel MOSFET, 150 A, 40 V, 8-Pin SOP TPH1R204PL, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 2.1 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 2.4V, Minimum Gate Threshold Voltage: 1.4V, Maximum Power Dissipation: 132 W, Transistor Configuration: Single, Maximum Gate Source Voltage: ±20 V, Forward Diode Voltage: 1.2V

Toshiba TC74HC574AP(F) Octal D Type Flip Flop IC, 3-State, 20-Pin PDIP, Input Type: Single Ended, Output Type: 3 State, Triggering Type: Positive Edge, Polarity: Non-Inverting, Mounting Type: Through Hole, Number of Elements per Chip: 8, Maximum Propagation Delay Time @ Maximum CL: 190 ns @ 2 V, Dimensions: 24.6 x 6.4 x 3.5mm, Length: 24.6mm

Toshiba TC7SH00FU,LJ(CT 2-Input NAND Logic Gate, 5-Pin SSOP, Mounting Type: Surface Mount, Number of Elements: 1, Schmitt Trigger Input: No, Logic Family: VHC, Input Type: CMOS, Maximum Operating Supply Voltage: 5.5 V, Maximum High Level Output Current: -8mA, Maximum Propagation Delay Time @ Maximum CL: 13 ns @ 50 pF, Minimum Operating Supply Voltage: 2 V, Dimensions: 2.9 x 1.6 x 1mm

Toshiba AC Input Phototransistor Output Optocoupler, Surface Mount, 4-Pin SO6, Maximum Forward Voltage: 1.4V, Typical Rise Time: 2µs, Maximum Input Current: ±1 A, Isolation Voltage: 3750 Vrms, Maximum Current Transfer Ratio: 600%, Typical Fall Time: 3µs, MPN: TLP182(GB,E(T

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