X36 PB-F TRANSISTOR OPTOCOUPLER LOW CURR

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#EFUSE IC WSON8, 4A/23V FAST PROTECTION

PHOTORELAY

High Speed Optocouplers IC cplr 10Mbps CTR=1000%typ

Photodiode Output Optocouplers Photovoltaic BVS=1.5kV

MOSFETs Small Signal MOSFET P-ch Vdss:-20V Vgss:-8/+6V Id:-3.2A

Photodiode Output Optocouplers Photovoltaic BVS=1.5kV

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ARM® Cortex®-M3 TX03 Microcontroller IC 32-Bit 64MHz 1MB (1M x 8) FLASH 100-LQFP (14x14)

Toshiba Dual Switching Diode, 2x Series Pair, 300mA 85V, 3-Pin USM 1SS302A,LF(T, Mounting Type: Surface Mount, Diode Technology: Silicon Junction, Maximum Diode Capacitance: 3pF, Maximum Operating Temperature: +150 °C, Length: 2mm, Width: 1.25mm, Height: 0.85mm, Dimensions: 2 x 1.25 x 0.85mm, Automotive Standard: AEC-Q101

Toshiba Photo IC Output Optocoupler, Surface Mount, 16-Pin SO-16L, Maximum Forward Voltage: 1.8V, Typical Rise Time: 32ns, Maximum Input Current: 3.5 mA, Isolation Voltage: 5000 Vrms, Typical Fall Time: 18ns, Series: TLP 5214, Special Features: AC And Brushless DC Motor Drives, Ideal for isolated IGBT/Power MOSFET Gate Drive, Industrial Inverters And Uninterruptible Power Supply, TLP5214 is Highly Integrated 40A Output Current IGBT Gate Drive Photo-Coupler Housed In Long Cree Page And Clearance, MPN: TLP5214(D4,E(O

Toshiba N-Channel MOSFET, 150 A, 45 V, 8-Pin SOP TPH1R005PL, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 1.7 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 2.4V, Minimum Gate Threshold Voltage: 1.4V, Maximum Power Dissipation: 170 W, Transistor Configuration: Single, Maximum Gate Source Voltage: ±20 V, Forward Diode Voltage: 1.2V

Toshiba N-Channel MOSFET, 55 A, 100 V, 3-Pin DPAK TK55S10N1, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 6.5 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 157 W, Transistor Configuration: Single, Maximum Gate Source Voltage: ±20 V, Automotive Standard: AEC-Q101

Toshiba N-Channel MOSFET, 92 A, 40 V, 8-Pin TSON TPN3R704PL, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 6 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 2.4V, Minimum Gate Threshold Voltage: 1.4V, Maximum Power Dissipation: 86 W, Transistor Configuration: Single, Maximum Gate Source Voltage: ±20 V, Forward Diode Voltage: 1.2V

Toshiba N-Channel MOSFET, 92 A, 100 V, 8-Pin DSOP TPW4R50ANH, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 4.5 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 142 W, Transistor Configuration: Single, Maximum Gate Source Voltage: ±20 V, Forward Diode Voltage: 1.2V