Toshiba Electronics Europe
MOSFET N 600V TO-220SIS; Transistor Polarity:N Channel; Continuous Drain Current Id:2A; Drain Source Voltage Vds:600V; On Resistance Rds(on):4.5ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Dissipation Pd:25W; Transistor Case Style:TO-220SIS; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; MSL:-; Current Id Max:2A; Pulse Current Idm:5A; Termination Type:Through Hole; Voltage Vds Typ:600V; Voltage Vgs Max:30V; Voltage Vgs Rds on Measurement:10V