LED, SMD PURE GREEN; LED Colour:Green; LED Mounting:SMD; Forward Current If:20mA; Forward Voltage:2.3V; Wavelength Typ:562nm; Luminous Intensity:6mcd; Viewing Angle:125°; Lens Shape:Rectangular; MSL:-; Bulb Size:1.25mm x 1.4mm; Current If Luminous Intensity:20mA; External Depth:1.1mm; External Length / Height:2mm; External Width:1.25mm; Forward Current If Max:20mA; LED Colour Presentation:Untinted Clear; Luminous Intensity @ If Min:1.53mcd; Luminous Intensity Typ:6mcd; PIV Max:4V; Peak Wavelength:562nm; Voltage Vf Typ:2.8V

Toshiba N-Channel MOSFET, 10 A, 800 V, 3-Pin TO-3PN TK10J80E, Mounting Type: Through Hole, Maximum Drain Source Resistance: 1 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Maximum Power Dissipation: 250 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Height: 20mm, Length: 15.5mm

Toshiba DF5A6.8FU(TE85L,F), Quad-Element ESD Protection Diode, 5-Pin USV, Diode Configuration: Common Anode, Mounting Type: Surface Mount, Number of Elements per Chip: 4, Minimum Operating Temperature: -55 °C, Maximum Operating Temperature: +125 °C, Dimensions: 2 x 1.25 x 0.9mm, Length: 2mm, Maximum Reverse Leakage Current: 500nA, Test Current: 5mA, Width: 1.25mm

Toshiba N-Channel MOSFET, 100 mA, 30 V, 3-Pin SOT-416 SSM3K15AFS,LF(T, Package Type: SOT-416 (SC-75), Mounting Type: Surface Mount, Maximum Drain Source Resistance: 6 Ω, Maximum Gate Threshold Voltage: 1.5V, Minimum Gate Threshold Voltage: 0.8V, Maximum Power Dissipation: 100 mW, Transistor Configuration: Single, Maximum Gate Source Voltage: +20 V, Height: 0.7mm, Length: 1.6mm

Toshiba Dual N/P-Channel MOSFET, 180 mA, 20 V, 6-Pin US SSM6L35FU(TE85L,F), Channel Type: N, P, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 20 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 1V, Maximum Power Dissipation: 200 mW, Transistor Configuration: Isolated, Maximum Gate Source Voltage: -10 V, +10 V, Height: 0.9mm, Length: 1.25mm

Toshiba DC Input Phototransistor Output Optocoupler, Surface Mount, 4-Pin SO-6L, Maximum Forward Voltage: 1.4V, Typical Rise Time: 2µs, Maximum Input Current: 50 mA, Isolation Voltage: 5000 Vrms, Maximum Current Transfer Ratio: 600%, Typical Fall Time: 3µs, Series: TLP 385, Special Features: AC Adapter, I/O Interface Board, Ideal for Programmable Controllers, TLP385 is Photo Coupler of High isolation Type that Consists of Photo transisto Optically Coupled to Gallium Arsenide Infrared Emitting Diode, MPN: TLP385(GB,E(T

Toshiba DC Input Open Collector Output Photocoupler, Surface Mount, 6-Pin SO6, Maximum Forward Voltage: 1.7V, MPN: TLP2303(E(T

Toshiba TC74VHC32FK(EL,K), Quad 2-Input OR Logic Gate, 14-Pin VSSOP, Mounting Type: Surface Mount, Schmitt Trigger Input: No, Maximum Operating Supply Voltage: 5.5 V, Minimum Operating Supply Voltage: 2 V, Dimensions: 4 x 3 x 0.8mm, Length: 4mm, Maximum Operating Temperature: +85 °C, Minimum Operating Temperature: -40 °C

Toshiba TC74HC14AP(F) Hex Schmitt Trigger Logic Gate, 14-Pin PDIP, Logic Function: Inverter, Number of Elements per Chip: 6, Schmitt Trigger Input: Yes, Maximum Propagation Delay Time @ Maximum CL: 125 ns @ 2 V, 21 ns @ 6 V, 25 ns @ 4.5 V, Maximum High Level Output Current: -5.2mA, Mounting Type: Through Hole, Dimensions: 19.25 x 6.4 x 3.5mm, Length: 19.25mm

Toshiba TBD62783AFWG(Z,EHZ 8 Power Switch IC 18-Pin, P-SOP, Switch On Resistance: 3.25Ω, Maximum Operating Supply Voltage: 25 V, Maximum Operating Current: 0.1mA, Power Rating: 1.47W, Mounting Type: Surface Mount, Maximum Operating Temperature: +85 °C, Minimum Operating Temperature: -40 °C, Dimensions: 11.68 x 7.62 x 2.4mm

Toshiba RN1401,LF(T NPN Digital Transistor, 50 V, 3-Pin SOT-23, Package Type: SOT-23 (TO-236), Mounting Type: Surface Mount, Maximum Power Dissipation: 200 mW, Transistor Configuration: Single, Maximum Emitter Base Voltage: 10 V, Dimensions: 2.9 x 1.5 x 1.1mm, Maximum Collector Emitter Saturation Voltage: 0.3 V

Toshiba N-Channel MOSFET, 65 A, 40 V, 3-Pin DPAK TK65S04N1L, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 4.3 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 2.5V, Minimum Gate Threshold Voltage: 1.5V, Maximum Power Dissipation: 107 W, Transistor Configuration: Single, Maximum Gate Source Voltage: ±20 V, Automotive Standard: AEC-Q101

Toshiba TC4081BF(EL,N,F), Quad 2-Input AND Logic Gate, 14-Pin SOP, Mounting Type: Surface Mount, Logic Family: CMOS, Maximum Operating Supply Voltage: 18 V dc, Maximum High Level Output Current: -9mA, Maximum Propagation Delay Time @ Maximum CL: 200 ns @ 50 pF, Minimum Operating Supply Voltage: 3 V dc, Maximum Low Level Output Current: 12mA, Dimensions: 10.8 x 5.3 x 1.9mm

Toshiba DC Input Phototransistor Output Optocoupler, Surface Mount, 16-Pin SOIC, Maximum Forward Voltage: 1.4V, Typical Rise Time: 2µs, Maximum Input Current: 50 mA, Isolation Voltage: 2.5 kVrms, Maximum Current Transfer Ratio: 400%, Typical Fall Time: 3µs, Series: TLP 291-4, Special Features: Suitable for High-Density Surface Mount Applications Such as Programmable Controllers, TLP291-4 Consists of Photo Transistors Optically Coupled to Gallium Arsenide Infrared Emitting Diodes, MPN: TLP291-4(GB-TP,E(T

Toshiba 2SC5200-O(S1,F,S) NPN Transistor, 15 A, 230 V, 3-Pin TO-3PL, Mounting Type: Through Hole, Maximum Power Dissipation: 150 W, Transistor Configuration: Single, Maximum Emitter Base Voltage: 5 V, Dimensions: 20.5 x 26 x 5.2mm, Maximum Collector Emitter Saturation Voltage: 3 V, Maximum Operating Temperature: +150 °C

Motor Driver BiCDMOS Parallel, PWM 48-WQFN (7x7)

Logic Gates