Description

MOSFET, N TO-3P; Transistor Polarity:N Channel; Continuous Drain Current Id:9A; Drain Source Voltage Vds:900V; On Resistance Rds(on):1.4ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2V; Power Dissipation Pd:150W; Transistor Case Style:TO-3P; No. of Pins:3Pins; Operating Temperature Max:150°C; MSL:-; Current Temperature:25°C; Device Marking:2SK2611; Full Power Rating Temperature:25°C; Lead Spacing:5.45mm; No. of Transistors:1; Pulse Current Idm:27A