Description

MOSFET, N, TO-3P; Transistor Polarity:N Channel; Continuous Drain Current Id:5A; Drain Source Voltage Vds:900V; On Resistance Rds(on):2.5ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Dissipation Pd:150W; Transistor Case Style:TO-3P; No. of Pins:3Pins; Operating Temperature Max:-; MSL:-; Current Id Max:5A; Current Temperature:25°C; Full Power Rating Temperature:25°C; Lead Spacing:5.45mm; No. of Transistors:1; Pulse Current Idm:15A; Termination Type:Through Hole; Voltage Vds Typ:900V; Voltage Vgs Max:30V; Voltage Vgs Rds on Measurement:10V