Description

IGBT MOD, 1.2KV, 630A, 150DEG C, 2.083KW; Transistor Polarity: Dual N Channel; DC Collector Current: 630A; Collector Emitter Saturation Voltage Vce(on): 2V; Power Dissipation Pd: 2.083kW; Collector Emitter Voltage V(br)ceo: 1.2kV; Transistor Case Style: Module; No. of Pins: 11Pins; Operating Temperature Max: 150°C; Product Range: -; SVHC: No SVHC (27-Jun-2018)