Description

IGBT MOD, 1.2KV, 309A, 150DEG C, 1.006KW; Transistor Polarity: Dual N Channel; DC Collector Current: 309A; Collector Emitter Saturation Voltage Vce(on): 2V; Power Dissipation Pd: 1.006kW; Collector Emitter Voltage V(br)ceo: 1.2kV; Transistor Case Style: Module; No. of Pins: 11Pins; Operating Temperature Max: 150°C; Product Range: -; SVHC: No SVHC (27-Jun-2018)