Igbt Module, Half Bridge, 1.2Kv, 154A Rohs Compliant: Yes |Starpower GD100HFU120C8SD

MOSFET MODULE;

IGBT MODULE, HALF BRIDGE, 1.2KV, 82A;

MOSFET MOD, 1.2KV, 299A, 150DEG C; Transistor Polarity: Dual N Channel; Continuous Drain Current Id: 299A; Drain Source Voltage Vds: 1.2kV; On Resistance Rds(on): 0.0067ohm; Rds(on) Test Voltage Vgs: 18V; Threshold Voltage Vgs: 5.6V; Power Dissipation Pd: -; Operating Temperature Max: 150°C; Product Range: -; SVHC: No SVHC (27-Jun-2018)

MOSFET MOD, 1.2KV, 381A, 150DEG C; Transistor Polarity: Dual N Channel; Continuous Drain Current Id: 381A; Drain Source Voltage Vds: 1.2kV; On Resistance Rds(on): 0.005ohm; Rds(on) Test Voltage Vgs: 18V; Threshold Voltage Vgs: 5.6V; Power Dissipation Pd: -; Operating Temperature Max: 150°C; Product Range: -; SVHC: No SVHC (27-Jun-2018)

MOSFET MOD, 1.2KV, 542A, 150DEG C; Transistor Polarity: Dual N Channel; Continuous Drain Current Id: 542A; Drain Source Voltage Vds: 1.2kV; On Resistance Rds(on): 0.0033ohm; Rds(on) Test Voltage Vgs: 18V; Threshold Voltage Vgs: 5.6V; Power Dissipation Pd: -; Operating Temperature Max: 150°C; Product Range: -; SVHC: No SVHC (27-Jun-2018)

MOSFET MOD, 1.2KV, 200A, 150DEG C; Transistor Polarity: Dual N Channel; Continuous Drain Current Id: 200A; Drain Source Voltage Vds: 1.2kV; On Resistance Rds(on): 0.01ohm; Rds(on) Test Voltage Vgs: 18V; Threshold Voltage Vgs: 5.6V; Power Dissipation Pd: -; Operating Temperature Max: 150°C; Product Range: -; SVHC: No SVHC (27-Jun-2018)

IGBT MOD, 1.2KV, 230A, 150DEG C, 746W; Transistor Polarity: Dual N Channel; DC Collector Current: 230A; Collector Emitter Saturation Voltage Vce(on): 2V; Power Dissipation Pd: 746W; Collector Emitter Voltage V(br)ceo: 1.2kV; Transistor Case Style: Module; No. of Pins: 7Pins; Operating Temperature Max: 150°C; Product Range: -; SVHC: No SVHC (27-Jun-2018)

IGBT MOD, 1.2KV, 600A, 150DEG C, 2.941KW; Transistor Polarity: Dual N Channel; DC Collector Current: 600A; Collector Emitter Saturation Voltage Vce(on): 2V; Power Dissipation Pd: 2.941kW; Collector Emitter Voltage V(br)ceo: 1.2kV; Transistor Case Style: Module; No. of Pins: 11Pins; Operating Temperature Max: 150°C; Product Range: -; SVHC: No SVHC (27-Jun-2018)

IGBT MOD, 1.2KV, 1.09KA, 3.947KW; Transistor Polarity: Dual N Channel; DC Collector Current: 1.09kA; Collector Emitter Saturation Voltage Vce(on): 2V; Power Dissipation Pd: 3.947kW; Collector Emitter Voltage V(br)ceo: 1.2kV; Transistor Case Style: Module; No. of Pins: 11Pins; Operating Temperature Max: 150°C; Product Range: -; SVHC: No SVHC (27-Jun-2018)

IGBT MODULE, 1.2KV, 30A, 118W;

IGBT MODULE, 1.2KV, 30A, 142W;

IGBT MODULE, 1.2KV, 20A, 133W;

IGBT MODULE, 650V, 30A, 112W;

IGBT MODULE, 650V, 40A, 129W;

IGBT MODULE, 1.2KV, 150A, 576W;

IGBT MODULE;

MOSFET MODULE, SIX N-CH, 1.2KV, 49A;

TRANSISTOR, IGBT MODULE, 1.2KV, 157A;

TRANSISTOR, IGBT MODULE, 1.2KV, 155A;