DDR3 SDRAM

DDR3 SDRAM

DDR3 SDRAM

Mobile DRAM SDR VDD1=1.8V, VDD2=1.35V, VDDCA & VDDQ=1.2V

Mobile DRAM SDR VDD1=1.8V, VDD2=1.35V, VDDCA & VDDQ=1.2V

Mobile DRAM SDR VDD1=1.8V, VDD2=1.35V, VDDCA & VDDQ=1.2V

Mobile DRAM SDR VDD1=1.8V, VDD2=1.35V, VDDCA & VDDQ=1.2V

Mobile DRAM SDR VDD1=1.8V, VDD2=1.35V, VDDCA & VDDQ=1.2V

Mobile DRAM SDR VDD1=1.8V, VDD2=1.35V, VDDCA & VDDQ=1.2V

Mobile DRAM SDR VDD1=1.8V, VDD2=1.35V, VDDCA & VDDQ=1.2V

Mobile DRAM SDR VDD1=1.8V, VDD2=1.35V, VDDCA & VDDQ=1.2V

Mobile DRAM SDR VDD1=1.8V, VDD2=1.35V, VDDCA & VDDQ=1.2V

Mobile DRAM SDR VDD1=1.8V, VDD2=1.35V, VDDCA & VDDQ=1.2V

Mobile DRAM SDR VDD1=1.8V, VDD2=1.35V, VDDCA & VDDQ=1.2V

Mobile DRAM SDR VDD1=1.8V, VDD2=1.35V, VDDCA & VDDQ=1.2V

IC, FLASH NAND 512MB, SMD, TSOP48; Flash Memory Type:SLC NAND; Memory Case Style:TSOP; No. of Pins:48Pins; Supply Voltage Min:2.7V; Supply Voltage Max:3.6V; Operating Temperature Min:0°C; Operating Temperature Max:70°C; Product Range:3V SLC NAND Flash Memories; MSL:-; SVHC:No SVHC (15-Jan-2018); Base Number:27; Block Size:16Kbit; IC Temperature Range:Commercial; Logic Function Number:HY27US08121; Memory Type:Flash; Memory Voltage Vcc:3.3V; Page Size:512Byte; Read Cycle Time tRC:50ns; Termination Type:Surface Mount Device; Voltage Vcc:3.3V

IC, FLASH NAND 1GB, SMD, TSOP48; Memory Case Style:TSOP; No. of Pins:48Pins; Supply Voltage Min:2.7V; Supply Voltage Max:3.6V; Operating Temperature Min:0°C; Operating Temperature Max:70°C; Product Range:-; MSL:-; SVHC:No SVHC (15-Jan-2018); Base Number:27; Block Size:135168Byte; IC Temperature Range:Commercial; Logic Function Number:HY27UF081; Memory Type:Flash; Memory Voltage Vcc:3.3V; Page Size:2112Byte; Read Cycle Time tRC:60ns; Termination Type:Surface Mount Device; Voltage Vcc:3.3V

DRAM Chip DDR4 SDRAM 4Gbit 512M X 8 1.2V 78-Pin FBGA

DRAM Chip DDR4 SDRAM 8Gbit 512M X 16 1.2V 96-Pin FBGA