IGBT MODULE 1.2KV 660A SEMITRANS 3; Transistor Polarity:N Channel; DC Collector Current:660A; Collector Emitter Saturation Voltage Vce(on):2.15V; Power Dissipation Pd:-; Collector Emitter Voltage V(br)ceo:1.2kV; No. of Pins:7Pins ;RoHS Compliant: Yes