IGBT MODULE N CH 1.7KV 660A; Transistor Polarity:N Channel; DC Collector Current:660A; Collector Emitter Saturation Voltage Vce(on):2V; Power Dissipation Pd:-; Collector Emitter Voltage V(br)ceo:1.7kV; Transistor Case Style:Module; No. of Pins:5Pins; Operating Temperature Max:150°C; Product Range:-; SVHC:No SVHC (15-Jun-2015)