Description

IGBT MODULE 1.2KV 960A SEMITRANS 4; Transistor Polarity:N Channel; DC Collector Current:960A; Collector Emitter Saturation Voltage Vce(on):1.2kV; Power Dissipation Pd:-; Collector Emitter Voltage V(br)ceo:1.2kV; No. of Pins:5Pins ;RoHS Compliant: Yes