Description

IGBT MODULE 1.7KV 660A SEMITRANS 4; Transistor Polarity:NPN; DC Collector Current:660A; Collector Emitter Saturation Voltage Vce(on):2V; Power Dissipation Pd:-; Collector Emitter Voltage V(br)ceo:1.7kV; No. of Pins:- ;RoHS Compliant: Yes