Description

IGBT MODULE 1.2KV 200A SEMITRANS 3; Transistor Polarity:Dual N Channel; DC Collector Current:200A; Collector Emitter Saturation Voltage Vce(on):3.3V; Power Dissipation Pd:-; Collector Emitter Voltage V(br)ceo:1.2kV RoHS Compliant: Yes