Description

IGBT MODULE 1.2KV 190A SEMITRANS 2; Transistor Polarity:N Channel; DC Collector Current:190A; Collector Emitter Saturation Voltage Vce(on):1.2kV; Power Dissipation Pd:-; Collector Emitter Voltage V(br)ceo:1.2kV; No. of Pins:7 ;RoHS Compliant: Yes