Description

IGBT MODULE 1.7KV 125A SEMITRANS 2N; Transistor Polarity:N Channel; DC Collector Current:130A; Collector Emitter Saturation Voltage Vce(on):1.7kV; Power Dissipation Pd:-; Collector Emitter Voltage V(br)ceo:1.7kV; No. of Pins:7Pins;RoHS Compliant: Yes