Description

IGBT MODULE 1.2KV 160A SEMITRANS 2; Transistor Polarity:Dual N Channel; DC Collector Current:160A; Collector Emitter Saturation Voltage Vce(on):1.8V; Power Dissipation Pd:-; Collector Emitter Voltage V(br)ceo:1.2kV ;RoHS Compliant: Yes