IGBT MODULE SINGLE 1.2KV 470A; Transistor Polarity:NPN; DC Collector Current:470A; Collector Emitter Saturation Voltage Vce(on):1.7V; Power Dissipation Pd:-; Collector Emitter Voltage V(br)ceo:1.2kV; No. of Pins:-; Product Range:-;RoHS Compliant: Yes

NPT IGBT (Standard)

DISK DIODE

THYRISTOR

SKT 493/04 E

SILICON CONTROLLED RECTIFIER 1.8kV V(DRM) 760A I(T) TO-200AC

SEMiX603GB12E4p

THYRISTOR MODULE 25A 1600V; SCR Module Type:Series Connected - SCRs; Peak Repetitive Off-State Voltage Vdrm:1600V; Gate Trigger Current Max Igt:150mA; Current It av:25A; On State RMS Current IT(rms):50A; Peak Non Rep Surge Current Itsm 50Hz:550A; Holding Current Max Ih:200mA; Gate Trigger Voltage Max Vgt:3V; Operating Temperature Max:125°C; Product Range:-; SVHC:No SVHC (15-Jun-2015); Current Itsm:470A; External Depth:20mm; External Length / Height:30mm; External Width:92mm; Fixing Centres:80mm; Fixing Hole Diameter:6mm; Isolation Voltage:2500V; No. of Pins:7Pins; Pin Configuration:A46; Repetitive Reverse Voltage Vrrm Max:1600V; Termination Type:Screw; Thyristor Case Style:Module; Thyristor Type:Thyristor

MOSFET N SEMITRANS; Transistor Polarity:N Channel; Continuous Drain Current Id:200A; Drain Source Voltage Vds:100V; On Resistance Rds(on):7mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipation Pd:700W; Transistor Case Style:SEMITRANS; No. of Pins:4Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:-; SVHC:No SVHC (15-Jun-2015); Current Id Max:200A; Current Temperature:25°C; External Depth:42mm; External Length / Height:30mm; External Width:80mm; Fixing Centres:65mm; Fixing Hole Diameter:6.4mm; Full Power Rating Temperature:25°C; No. of Transistors:1; Operating Temperature Min:-40°C; Operating Temperature Range:-40°C to +150°C; Pulse Current Idm:600A; Voltage Vds Typ:100V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:4V; Voltage Vgs th Min:2.1V

Power Module Diode 1.2 kV 95 A 1.5 V Single ;RoHS Compliant: Yes

DIODE STANDARD 25A 1200V STUD; No. of Phases:Single; Repetitive Reverse Voltage Vrrm Max:1.2kV; Forward Current If(AV):25A; Forward Voltage VF Max:1.55V; Diode Module Configuration:Single; Packaging:Each; Current Ifsm:375A; Diode;RoHS Compliant: Yes

Power Module Diode 1.6 V 80 A 1.55 V Single

RECTIFIER DIODE 1.5KV V(RRM) STR-M12 ;ROHS COMPLIANT: YES

SKD 110/08 ;ROHS COMPLIANT: YES

SILICON CONTROLLED RECTIFIER 800V V(DRM) 100A I(T) TO-209varM12 ;RoHS Compliant: Yes

IGBT MODULE SIX 1.2KV 129A; Transistor Polarity:Six NPN; DC Collector Current:129A; Collector Emitter Saturation Voltage Vce(on):1.7V; Power Dissipation Pd:-; Collector Emitter Voltage V(br)ceo:1.2kV; No. of Pins:- ;RoHS Compliant: Yes

IGBT Power Module

THYRISTOR MODULE 273A 1.6KV A 43A; SCR Module Type:Series Connected - SCRs; Peak Repetitive Off-State Voltage Vdrm:1.6kV; Gate Trigger Current Max Igt:150mA; Current It av:273A; On State RMS Current IT(rms):450A; Product Range:- ;RoHS Compliant: Yes

IGBT MODULE 1.7KV 160A SEMITRANS 2; Transistor Polarity:Dual NPN; DC Collector Current:160A; Collector Emitter Saturation Voltage Vce(on):2V; Power Dissipation Pd:-; Collector Emitter Voltage V(br)ceo:1.7kV; No. of Pins:- ;RoHS Compliant: Yes

IGBT Power Module