IGBT MODULE DUAL N CH 1.2KV 231A; Transistor Polarity:Dual N Channel; DC Collector Current:231A; Collector Emitter Saturation Voltage Vce(on):1.75V; Power Dissipation Pd:-; Collector Emitter Voltage V(br)ceo:1.2kV; Transistor Case Style:Module; No. of Pins:7Pins; Operating Temperature Max:175°C; Product Range:-; SVHC:No SVHC (15-Jun-2015)

NPT IGBT (Standard) MOSFET; CASE: SEMITRANS 4; Current(A): 200

IGBT MODULE DUAL N CH 1.2KV 422A; Transistor Polarity:Dual N Channel; DC Collector Current:422A; Collector Emitter Saturation Voltage Vce(on):1.85V; Power Dissipation Pd:-; Collector Emitter Voltage V(br)ceo:1.2kV; Transistor Case Style:Module; No. of Pins:7Pins; Operating Temperature Max:175°C; Product Range:-; SVHC:No SVHC (15-Jun-2015)

TRANSISTOR; DC Collector Current:618A; C; TRANSISTOR; DC Collector Current:618A; Collector Emitter Voltage Vces:1.2kV; Collector Emitter Voltage V(br)ceo:800mV; Operating Temperature Min:-40°C; Operating Temperature Max:175°C; No. of Pins:7; Package / Case:SEMITRANS 3

IGBT MODULE DUAL N CH 1.2KV 612A; Transistor Polarity:Dual N Channel; DC Collector Current:612A; Collector Emitter Saturation Voltage Vce(on):1.75V; Power Dissipation Pd:-; Collector Emitter Voltage V(br)ceo:1.2kV; Transistor Case Style:Module; No. of Pins:7Pins; Operating Temperature Max:175°C; Product Range:-; SVHC:No SVHC (15-Jun-2015)

IGBT 3 (Trench) MOSFET; CASE: SEMITRANS 4; Current(A): 600

IGBT 4 Fast (Trench) MOSFET; CASE: SEMITRANS 4; Current(A): 600

IGBT MODULE 1.2KV 1.305KA; Transistor Polarity:NPN; DC Collector Current:1.305kA; Collector Emitter Saturation Voltage Vce(on):1.83V; Power Dissipation Pd:-; Collector Emitter Voltage V(br)ceo:1.2kV; No. of Pins:5Pins ;RoHS Compliant: Yes

NPT IGBT (Standard) MOSFET; CASE: SEMITRANS 2; Current(A): 50

IGBT 3 (Trench) MOSFET; CASE: SEMITRANS 3; Current(A): 150

NPT IGBT (Standard) MOSFET; CASE: SEMITRANS 3; Current(A): 150

NPT IGBT (Standard) MOSFET; CASE: SEMITRANS 3; Current(A): 150

IGBT MODULE SINGLE 1.7KV 430A; Transistor Polarity:NPN; DC Collector Current:430A; Collector Emitter Saturation Voltage Vce(on):2V; Power Dissipation Pd:-; Collector Emitter Voltage V(br)ceo:1.7kV; No. of Pins:-; Product Range:- ;RoHS Compliant: Yes

IGBT 3 (Trench) MOSFET; CASE: SEMiX 3s; Current(A): 600

IGBT 4 (Trench) MOSFET; CASE: SEMiX 13; Current(A): 100

IGBT 4 (Trench) MOSFET; CASE: SEMiX 1s; Current(A): 150

IGBT 4 (Trench) MOSFET; CASE: SEMiX 1s; Current(A): 150

IGBT 4 (Trench) MOSFET; CASE: SEMiX 13; Current(A): 150

V-IGBT MOSFET; CASE: SEMiX 2s; Current(A): 200

IGBT 4 (Trench) MOSFET; CASE: SEMiX 3s; Current(A): 450