IGBT 4 (Trench) MOSFET; CASE: SEMITOP 3; Current(A): 8

IGBT MODULE SIX 1.2KV 15A; Transistor Polarity:Six NPN; DC Collector Current:22A; Collector Emitter Saturation Voltage Vce(on):1.7V; Power Dissipation Pd:-; Collector Emitter Voltage V(br)ceo:1.2kV; No. of Pins:-; Product Range:- ;RoHS Compliant: Yes

IGBT Module ;RoHS Compliant: Yes

IGBT 4 (Trench) MOSFET; CASE: SEMITOP 2; Current(A): 35

IGBT 4 (Trench) MOSFET; CASE: SEMITOP 2; Current(A): 35

IGBT Module ;RoHS Compliant: Yes

IGBT 4 (Trench) MOSFET; CASE: SEMITOP 4; Current(A): 50

IGBT 3 (Trench) MOSFET; CASE: SEMITOP 4; Current(A): 75

IGBT 4 (Trench) MOSFET; CASE: SEMITOP 4; Current(A): 75

IGBT 4 (Trench) MOSFET; CASE: SEMITOP 3; Current(A): 100

IGBT MODULE DUAL N CH 600V 195A; Transistor Polarity:Dual N Channel; DC Collector Current:195A; Collector Emitter Saturation Voltage Vce(on):1.45V; Power Dissipation Pd:-; Collector Emitter Voltage V(br)ceo:600V; Transistor Case Style:Module; No. of Pins:7Pins; Operating Temperature Max:175°C; Product Range:-; SVHC:No SVHC (15-Jun-2015)

IGBT MODULE DUAL N CH 600V 265A; Transistor Polarity:Dual N Channel; DC Collector Current:265A; Collector Emitter Saturation Voltage Vce(on):1.45V; Power Dissipation Pd:-; Collector Emitter Voltage V(br)ceo:600V; Transistor Case Style:Module; No. of Pins:7Pins; Operating Temperature Max:175°C; Product Range:-; SVHC:No SVHC (15-Jun-2015)

NPT IGBT (Standard) MOSFET; CASE: SEMITRANS 3; Current(A): 200

IGBT 3 (Trench) MOSFET; CASE: SEMITRANS 5; Current(A): 400

IGBT 3 (Trench) MOSFET; CASE: SEMITRANS 3; Current(A): 600

IGBT HALFBRIDGE MODULE 50A 1200V; Transistor Polarity:Dual NPN; DC Collector Current:81A; Collector Emitter Saturation Voltage Vce(on):1.85V; Power Dissipation Pd:-; Collector Emitter Voltage V(br)ceo:1.2kV; Transistor Case Style:SEMITRANS 2; No. of Pins:7Pins; Operating Temperature Max:175°C; Product Range:-; SVHC:No SVHC (15-Jun-2015); Operating Temperature Min:-40°C

IGBT MODULE 1.2KV 81A; Transistor Polarity:NPN; DC Collector Current:81A; Collector Emitter Saturation Voltage Vce(on):1.85V; Power Dissipation Pd:-; Collector Emitter Voltage V(br)ceo:1.2kV; No. of Pins:11Pins; Product Range:- ;RoHS Compliant: Yes

IGBT MODULE DUAL N CH 1.2KV 160A; Transistor Polarity:Dual N Channel; DC Collector Current:160A; Collector Emitter Saturation Voltage Vce(on):1.8V; Power Dissipation Pd:-; Collector Emitter Voltage V(br)ceo:1.2kV; Transistor Case Style:Module; No. of Pins:7Pins; Operating Temperature Max:175°C; Product Range:-; SVHC:No SVHC (15-Jun-2015)

IGBT 3 (Trench) MOSFET; CASE: SEMITRANS 3; Current(A): 150

IGBT 3 (Trench) MOSFET; CASE: SEMITRANS 3; Current(A): 150