NPT IGBT (Ultrafast) MOSFET; CASE: SEMITOP 3; Current(A): 75

MOSFET; CASE: SEMITRANS M1; Current(A): 200

NPT IGBT (Standard) MOSFET; CASE: SEMITRANS 2; Current(A): 50

NPT IGBT (Standard) MOSFET; CASE: SEMITRANS 2; Current(A): 75

IGBT Module; Transistor Polarity:-; DC Collector Current:400A; Collector Emitter Saturation Voltage Vce(on):600V; Power Dissipation Pd:-; Collector Emitter Voltage V(br)ceo:900mV; No. of Pins:18Pins; Operating Temperature Max:175 C ;RoHS Compliant: Yes

NPT IGBT (Standard) MOSFET; CASE: SEMITRANS 3; Current(A): 300

IGBT 3 (Trench) MOSFET; CASE: SEMITRANS 3; Current(A): 400

NPT IGBT (Standard) MOSFET; CASE: SEMITRANS 2; Current(A): 50

NPT IGBT (Standard) MOSFET; CASE: SEMITRANS 6; Current(A): 50

IGBT 3 (Trench) MOSFET; CASE: SEMITRANS 2; Current(A): 150

IGBT MODULE DUAL N CH 1.2KV 232A; Transistor Polarity:Dual N Channel; DC Collector Current:232A; Collector Emitter Saturation Voltage Vce(on):1.8V; Power Dissipation Pd:-; Collector Emitter Voltage V(br)ceo:1.2kV; Transistor Case Style:Module; No. of Pins:7Pins; Operating Temperature Max:175°C; Product Range:-; SVHC:No SVHC (15-Jun-2015)

NPT IGBT (Ultrafast) MOSFET; CASE: SEMITRANS 3; Current(A): 150

NPT IGBT (Ultrafast) MOSFET; CASE: SEMITRANS 3; Current(A): 150

TRANSISTOR; Transistor Polarity:-; DC Collector Current:225A; Collector Emitter Saturation Voltage Vce(on):1.2kV; Power Dissipation Pd:-; Collector Emitter Voltage V(br)ceo:940mV; No. of Pins:7Pins; Operating Temperature Max:175 C ;RoHS Compliant: Yes

Freewheeling Diodes CAL High Density; Current(A): 50

Freewheeling Diodes CAL I3 Fast; Current(A): 80

Freewheeling Diodes CAL I4 Fast; Current(A): 8

Freewheeling Diodes CAL High Density; Current(A): 15

Freewheeling Diodes CAL I3 Fast; Current(A): 25

Freewheeling Diodes CAL I3 Fast; Current(A): 40