IGBT 4 (Trench) MOSFET; CASE: SEMITRANS 3; Current(A): 200

IGBT 4 (Trench) MOSFET; CASE: SEMITRANS 3; Current(A): 200

IGBT MODULE DUAL N CH 1.2KV 313A; Transistor Polarity:Dual N Channel; DC Collector Current:313A; Collector Emitter Saturation Voltage Vce(on):1.8V; Power Dissipation Pd:-; Collector Emitter Voltage V(br)ceo:1.2kV; Transistor Case Style:Module; No. of Pins:7Pins; Operating Temperature Max:175°C; Product Range:-; SVHC:No SVHC (15-Jun-2015)

IGBT MODULE DUAL N CH 1.2KV 311A; Transistor Polarity:Dual N Channel; DC Collector Current:311A; Collector Emitter Saturation Voltage Vce(on):1.75V; Power Dissipation Pd:-; Collector Emitter Voltage V(br)ceo:1.2kV; Transistor Case Style:Module; No. of Pins:7Pins; Operating Temperature Max:175°C; Product Range:-; SVHC:No SVHC (15-Jun-2015)

IGBT 4 Fast (Trench) MOSFET; CASE: SEMITRANS 3; Current(A): 300

IGBT MODULE DUAL 1.2KV 422A; Transistor Polarity:Dual NPN; DC Collector Current:422A; Collector Emitter Saturation Voltage Vce(on):1.85V; Power Dissipation Pd:-; Collector Emitter Voltage V(br)ceo:1.2kV; No. of Pins:- ;RoHS Compliant: Yes

IGBT MODULE DUAL N CH 1.2KV 400A; Transistor Polarity:Dual N Channel; DC Collector Current:400A; Collector Emitter Saturation Voltage Vce(on):3.3V; Power Dissipation Pd:-; Collector Emitter Voltage V(br)ceo:1.2kV; Transistor Case Style:Module; No. of Pins:7Pins; Operating Temperature Max:150°C; Product Range:-; SVHC:No SVHC (15-Jun-2015)

IGBT MODULE; IGBT Module; Transistor Type:IGBT Module; DC Collector Current:443A; Collector Emitter Voltage Vces:1.2kV; Collector Emitter Voltage V(br)ceo:940mV; No. of Pins:5; Package / Case:SEMITRANS 3

IGBT MODULE SINGLE 1.2KV 616A; Transistor Polarity:NPN; DC Collector Current:616A; Collector Emitter Saturation Voltage Vce(on):1.8V; Power Dissipation Pd:-; Collector Emitter Voltage V(br)ceo:1.2kV; No. of Pins:-; Product Range:-;RoHS Compliant: Yes

IGBT MODULE SINGLE 1.2KV 616A; Transistor Polarity:NPN; DC Collector Current:616A; Collector Emitter Saturation Voltage Vce(on):1.8V; Power Dissipation Pd:-; Collector Emitter Voltage V(br)ceo:1.2kV; No. of Pins:-; Product Range:-;RoHS Compliant: Yes

IGBT MODULE N-CH 1.2KV 616A; Transistor Polarity:N Channel; DC Collector Current:616A; Collector Emitter Saturation Voltage Vce(on):1.8V; Power Dissipation Pd:-; Collector Emitter Voltage V(br)ceo:1.2kV; Transistor Case ;RoHS Compliant: Yes

TRANSISTOR; Transistor Polarity:-; DC Collector Current:598A; Collector Emitter Saturation Voltage Vce(on):1.2kV; Power Dissipation Pd:-; Collector Emitter Voltage V(br)ceo:940mV; No. of Pins:7Pins; Operating Temperature Max:175 C ;RoHS Compliant: Yes

TRANSISTOR; Transistor Polarity:-; DC Collector Current:890A; Collector Emitter Saturation Voltage Vce(on):1.2kV; Power Dissipation Pd:-; Collector Emitter Voltage V(br)ceo:940mV; No. of Pins:5Pins; Operating Temperature Max:175 C ;RoHS Compliant: Yes

IGBT MODULE 1.7KV 110A SEMITRANS 2; Transistor Polarity:N Channel; DC Collector Current:110A; Collector Emitter Saturation Voltage Vce(on):1.7kV; Power Dissipation Pd:-; Collector Emitter Voltage V(br)ceo:1.7kV; No. of Pins:7Pins ;RoHS Compliant: Yes

IGBT MODULE N CH 1.7KV 660A; Transistor Polarity:N Channel; DC Collector Current:660A; Collector Emitter Saturation Voltage Vce(on):2V; Power Dissipation Pd:-; Collector Emitter Voltage V(br)ceo:1.7kV; Transistor Case Style:Module; No. of Pins:5Pins; Operating Temperature Max:150°C; Product Range:-; SVHC:No SVHC (15-Jun-2015)

IGBT 3 (Trench) MOSFET; CASE: SEMiX 13; Current(A): 200

IGBT 3 (Trench) MOSFET; CASE: SEMiX 2s; Current(A): 300

IGBT 3 (Trench) MOSFET; CASE: SEMiX 3s; Current(A): 600

V-IGBT MOSFET; CASE: SEMiX 1s; Current(A): 150

IGBT 4 (Trench) MOSFET; CASE: SEMiX 2s; Current(A): 200