RECTIFIER DIODE 1.2KV V(RRM) STR-M6

SKR 71/12 UNF ;ROHS COMPLIANT: YES

SKIIP 20NAB12IT43

SKIIP 30NAB12T10

IGBT POWER MODULE; Transistor Polarity:-; DC Collector Current:-; Collector Emitter Saturation Voltage Vce(on):-; Power Dissipation Pd:-; Collector Emitter Voltage V(br)ceo:-; No. of Pins:5Pins; Operating Temperature Max:- ;RoHS Compliant: Yes

Power Module Diode 400 V 95 A 1.5 V Single ;RoHS Compliant: Yes

Power Module Diode 400 V 165 A 1.5 V Single ;RoHS Compliant: Yes

DIODE STANDARD 165A 1200V STUD; No. of Phases:Single; Repetitive Reverse Voltage Vrrm Max:1.2kV; Forward Current If(AV):165A; Forward Voltage VF Max:1.5V; Diode Module Configuration:Single; Packaging:Each; SVHC:No SVHC ;RoHS Compliant: Yes

Power Module Diode 1.2 kV 95 A 1.5 V Single ;RoHS Compliant: Yes

DIODE STANDARD 320A 400V STUD; Repetitive Reverse Voltage Vrrm Max:400V; Forward Current If(AV):320A; Forward Voltage VF Max:1.4V; Diode Module Configuration:Single; Packaging:Each; Product Range:SKR Series; SVHC:No SVHC (15-Jun-2015); Current Ifsm:6kA; Diode Case Style:E15; Diode Configuration:Single; Diode Polarity:Stud Cathode; Diode Type:Standard Recovery; Forward Surge Current Ifsm Max:6kA; Forward Voltage:1.4V; Junction Temperature Tj Max:180°C; No. of Phases:Single; No. of Pins:2Pins; Operating Temperature Max:180°C; Operating Temperature Min:-40°C; Operating Temperature Range:-40°C to +180°C; Thread Size:M16

IGBT MODULE 600V 100A SEMITRANS 2; Transistor Polarity:N Channel; DC Collector Current:100A; Collector Emitter Saturation Voltage Vce(on):600V; Power Dissipation Pd:-; Collector Emitter Voltage V(br)ceo:600V; No. of Pins:5Pins ;RoHS Compliant: Yes

SILICON CONTROLLED RECTIFIER 1.2kV V(DRM) 300A I(T) TO-209varM24

SCR THYRISTOR 24A 1.6KV B 2; SCR Module Type:Single SCR; Peak Repetitive Off-State Voltage Vdrm:1.6kV; Gate Trigger Current Max Igt:100mA; Current It av:24A; On State RMS Current IT(rms):50A; Holding Current Max Ih:150mA ;RoHS Compliant: Yes

DRIVER

SKKD 701/18 ;ROHS COMPLIANT: YES

SKKQ 1500/14E

SKKQ 800/14E

IGBT MODULE 1.2KV 616A SEMITRANS 3; Transistor Polarity:Dual NPN; DC Collector Current:616A; Collector Emitter Saturation Voltage Vce(on):1.8V; Power Dissipation Pd:-; Collector Emitter Voltage V(br)ceo:1.2kV; No. of Pins:- ;RoHS Compliant: Yes

SKKD 701/22 H4

SKKQ 1200/18E