TRANSISTOR, NPN, 15V, 0.7A, SOT323; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:15V; Transition Frequency ft:330MHz; Power Dissipation Pd:300mW; DC Collector Current:700mA; DC Current Gain hFE:800hFE; Transistor Case Style:SOT-323; No. of Pins:3Pins; Operating Temperature Max:150°C; MSL:-; Gain Bandwidth ft Typ:330MHz

TRANSISTOR, PNP SC-51; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:160V; Transition Frequency ft:150MHz; Power Dissipation Pd:900mW; DC Collector Current:-70mA; DC Current Gain hFE:100hFE; Transistor Case Style:SC-51; No. of Pins:3Pins; MSL:-; Collector Emitter Saturation Voltage Vce(on):300mV; Continuous Collector Current Ic Max:70mA; Current Ic @ Vce Sat:30mA; Current Ic Continuous a Max:70mA; Current Ic hFE:10mA; Full Power Rating Temperature:25°C; Gain Bandwidth ft Min:150MHz; Gain Bandwidth ft Typ:150MHz; Hfe Min:100; No. of Transistors:1; Pin Configuration:a; Power Dissipation Ptot Max:900mW; Transistor Type:General Purpose; Voltage Vcbo:180V

MOSFET, N TO-3PML; Transistor Polarity:N Channel; Continuous Drain Current Id:16A; Drain Source Voltage Vds:450V; On Resistance Rds(on):0.3ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:-; Power Dissipation Pd:70W; Transistor Case Style:TO-3PML; No. of Pins:-; Operating Temperature Max:-; MSL:-; Current Temperature:25°C; Full Power Rating Temperature:25°C; Isolation Voltage:4000V; No. of Transistors:1; Pulse Current Idm:64A; Voltage Vgs th Max:3V; Voltage Vgs th Min:2V

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