TRANSISTOR PNP TO-3P; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-160V; Transition Frequency ft:40MHz; Power Dissipation Pd:130W; DC Collector Current:-15A; DC Current Gain hFE:50hFE; Transistor Case Style:TO-3P; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:-; Av Current Ic:15A; Collector Emitter Saturation Voltage Vce(on):2V; Continuous Collector Current Ic Max:15A; Current Ib:4A; Current Ic Continuous a Max:15A; Current Ic hFE:5A; Device Marking:2SA1386; Full Power Rating Temperature:25°C; Gain Bandwidth ft Typ:40MHz; Hfe Min:50; Junction Temperature Tj Max:150°C; No. of Transistors:1; Power Dissipation Ptot Max:130W; Termination Type:Through Hole; Voltage Vcbo:160V

TRANSISTOR PNP TO-3P; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-230V; Transition Frequency ft:35MHz; Power Dissipation Pd:130W; DC Collector Current:-15A; DC Current Gain hFE:50hFE; Transistor Case Style:TO-3P; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:-; Av Current Ic:15A; Collector Emitter Saturation Voltage Vce(on):2V; Continuous Collector Current Ic Max:15A; Current Ib:4A; Current Ic Continuous a Max:15A; Current Ic hFE:5A; Device Marking:2SA1294; Full Power Rating Temperature:25°C; Gain Bandwidth ft Typ:35MHz; Hfe Min:50; Junction Temperature Tj Max:150°C; No. of Transistors:1; Power Dissipation Ptot Max:130W; Termination Type:Through Hole; Voltage Vcbo:230V

TRANSISTOR NPN TO-3P; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:160V; Transition Frequency ft:50MHz; Power Dissipation Pd:130W; DC Collector Current:15A; DC Current Gain hFE:50hFE; Transistor Case Style:TO-3P; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:-; Av Current Ic:15A; Collector Emitter Saturation Voltage Vce(on):2V; Continuous Collector Current Ic Max:15A; Current Ib:4A; Current Ic Continuous a Max:15A; Current Ic hFE:5A; Device Marking:2SC3519; Full Power Rating Temperature:25°C; Gain Bandwidth ft Typ:50MHz; Hfe Min:50; Junction Temperature Tj Max:150°C; No. of Transistors:1; Power Dissipation Ptot Max:130W; Termination Type:Through Hole; Voltage Vcbo:160V

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