Resistor Anti-Sulfured 0402 25.5 Ohm 1% 1/16W ±100ppm/°C Molded T/R

Resistor Anti-Sulfured 0402 26.1k Ohm 1% 1/16W ±100ppm/°C Molded T/R

Resistor Anti-Sulfured 0402 270 Ohm 1% 1/16W ±100ppm/°C Molded T/R

Resistor Anti-Sulfured 0402 2M Ohm 1% 1/16W ±100ppm/°C Molded T/R

Resistor Anti-Sulfured 0402 215k Ohm 1% 1/16W ±100ppm/°C Molded T/R

FERAM, 32K, SPI, 8SOP; Memory Type:FRAM; Memory Size:32Kbit; NVRAM Memory Configuration:4K x 8bit; IC Interface Type:SPI; Access Time:-; Memory Case Style:SOP; No. of Pins:8Pins; Supply Voltage Min:2.7V; Supply Voltage Max:3.6V; Operating Temperature Min:-40°C; Operating Temperature Max:85°C; MSL:-; Operating Temperature Range:-40°C to +85°C; Supply Voltage Range:2.7V to 3.6V; Termination Type:Surface Mount Device

WAFER CHIP 60V 3A

EEPROM, AEC-Q100, 256KBIT, -40TO125DEG C ROHS COMPLIANT: YES

Linear Voltage Regulator IC Positive Fixed 1 Output 500mA TO-252

82 mOhms ±1% 0.333W, 1/3W Chip Resistor 0805 (2012 Metric) Automotive AEC-Q200, Current Sense Thick Film

Zener Diode 30V 200mW ±3% Surface Mount UMD2

Diode Array 2 Pair Common Cathode Standard 80V 25mA Surface Mount 5-TSSOP, SC-70-5, SOT-353

N-Channel 1200V 55A (Tc) 262W Through Hole TO-247-4L

NPN 4A 80V MIDDLE POWER TRANSISTOR;

600V PRESTOMOS WT INT HIGH-SPEED DIODE;

HIGH-SPEED SWITCHING POWER MOSFET;

HIGH-SPEED SWITCHING POWER MOSFET;

FIELD STOP TRENCH IGBT;

N-Channel 650V 21A (Tc) 103W (Tc) Through Hole TO-247N

Bipolar (BJT) Transistor