Description

IGBT MODULE 1.2kV 10A DIP; Transistor Polarity:-; DC Collector Current:10A; Collector Emitter Saturation Voltage Vce(on):1.9V; Power Dissipation Pd:66.2W; Collector Emitter Voltage V(br)ceo:1.2kV; No. of Pins:30; Packaging:Each ;RoHS Compliant: Yes