Description

IGBT MODULE 1.2KV 900A; Transistor Polarity:Dual N Channel; DC Collector Current:900A; Collector Emitter Saturation Voltage Vce(on):1.2kV; Power Dissipation Pd:5.9kW; Collector Emitter Voltage V(br)ceo:1.2kV; No. of Pins:21