IGBT Module; Transistor Polarity:-; DC Collector Current:50A; Collector Emitter Saturation Voltage Vce(on):1.9V; Power Dissipation Pd:168W; Collector Emitter Voltage V(br)ceo:600V; No. of Pins:25Pins; Operating Temperature Max:150 C ;RoHS Compliant: Yes
IGBT MODULE DUAL 1.7KV 1KA; Transistor Polarity:Dual N Channel; DC Collector Current:1kA; Collector Emitter Saturation Voltage Vce(on):1.9V; Power Dissipation Pd:10kW; Collector Emitter Voltage V(br)ceo:1.7kV; No. of Pins:- ;RoHS Compliant: Yes
IGBT MODULE 1.2KV 1KA; Transistor Polarity:Dual N Channel; DC Collector Current:900A; Collector Emitter Saturation Voltage Vce(on):1.2kV; Power Dissipation Pd:7.5kW; Collector Emitter Voltage V(br)ceo:1.2kV; No. of Pins:14
IGBT MODULE 1.2KV 100A; Transistor Polarity:N Channel; DC Collector Current:100A; Collector Emitter Saturation Voltage Vce(on):1.2kV; Power Dissipation Pd:560W; Collector Emitter Voltage V(br)ceo:1.2kV; No. of Pins:7