NPN Silicon Phototransistor

NPN Silicon Phototransistor

NPN Silicon Phototransistor

PHOTOTRANSISTOR LATERAL; Wavelength Typ:935nm; Viewing Angle:-; Power Consumption:100mW; No. of Pins:2Pins; Transistor Case Style:Side Looking; Packaging:Each; Product Range:-; Automotive Qualification Standard:-; MSL:-; SVHC:No SVHC (17-Dec-2015); Collector Emitter Saturation Voltage Vce(on):0.4V; Current Ic Min:1.3mA; Current Ic Typ:4.7mA; Dark Current:100nA; External Depth:2.28mm; External Length / Height:5.71mm; External Width:4.45mm; Lead Length:12.7mm; Lead Spacing:2.54mm; Nom Sensitivity @ mW/cm²:1.3mA @ 1mW/cm²; Operating Temperature Max:100°C; Operating Temperature Min:-40°C; Operating Temperature Range:-40°C to +100°C; Peak Spectral Response Wavelength:935nm; Power Dissipation Pd:100mW; Storage Temperature Max:100°C; Storage Temperature Min:-40°C; Transistor Polarity:NPN; Transistor Type:NPN; Voltage Vcc:5V

SENSOR IR PLCC-2; Wavelength Typ:935nm; Viewing Angle:100°; Power Consumption:75mW; No. of Pins:2Pins; Transistor Case Style:LCC; Packaging:Cut Tape; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 2A - 4 weeks; SVHC:No SVHC (17-Dec-2015); Breakdown Voltage Vbr:30V; Dark Current:100nA; Operating Temperature Max:85°C; Operating Temperature Min:-25°C; Operating Temperature Range:-25°C to +85°C; Rise Time:15µs; Transistor Polarity:NPN

NPN Silicon Phototransistor

NPN Silicon Phototransistor

NPN Silicon Phototransistor

NPN Phototransistor with Base-Emitter Resistor

NPN Phototransistor with Base-Emitter Resistor

NPN Phototransistor with Base-Emitter Resistor

NPN Phototransistor with Collector- Emitter Capacitor

NPN Phototransistor with Collector- Emitter Capacitor

OPTO-SENSOR PHOTODETECTOR; Wavelength Typ:-; Viewing Angle:-; Power Consumption:250mW; No. of Pins:3Pins; Transistor Case Style:TO-18; Packaging:Each; Product Range:-; Automotive Qualification Standard:-; MSL:-; SVHC:No SVHC (15-Jun-2015); Input Current:100µA; No. of Channels:1Channels; Operating Temperature Max:125°C; Operating Temperature Min:-65°C; Operating Temperature Range:-65°C to +125°C; Output Voltage Max:30V; Transistor Polarity:NPN; Transistor Type:Photo

IR EMITTER 935NM MINI-PILL-2 SMD; Viewing Angle:24 ; Diode Case Style:Mini-pill; Forward Current If(AV):50mA; Forward Voltage VF Max:1.8V; Rise Time:1 s; Fall Time tf:500ns; Operating Temperature Min:-65 C; Packaging:Each; MSL:- ;RoHS Compliant: Yes

OP224 Series 890 nm 18? 50 mA Hi-Reliability GaAIAs Infrared Emitting Diode

Phototransistors TO-18, NPN Si Photo transistor

Phototransistors NPN SIL PHOTOTRANS TO-18

Phototransistors NPN SIL PHOTOTRANS RDIAL TO-18

PHOTO INTERRUPTER REFLECTIVE 5.08MM; Sensor Output:Phototransistor; Sensor Mounting:Panel / Chassis; Sensing Distance:5.08mm; Forward Current If:50mA; Reverse Voltage Vr:2V; Collector Emitter Voltage V(br)ceo:25V; Forward Voltage:1.7V; Product Range:OPB700Z Series; SVHC:No SVHC (17-Dec-2015); Collector Emitter Saturation Voltage Vce(on):1.1V; Continuous Collector Current Ic Max:2.5mA; Current Ic Min:0.1mA; External Depth:2.54mm; External Length / Height:8.26mm; External Width:15.24mm; Forward Voltage VF Max:1.7V; Input Current:50mA; Material:Black Plastic; No. of Channels:1Channels; On Current Ice:2.5mA; Operating Temperature Max:100°C; Operating Temperature Min:-40°C; Operating Temperature Range:-40°C to +100°C; Optocoupler Output Type:Phototransistor; Output Voltage:25V; Packaging:Each; Peak Wavelength:890nm; Reflective Sensing Distance:5.08mm; Reverse Leakage Current Max:100µA; Voltage BVceo Min:25V; Voltage BVeco Min:5V