Surface Mount Optically Coupled Isolator

Surface Mount Optically Coupled Isolator

Surface Mount Optically Coupled Isolator

IR EMITTER 935NM TO-46-2 THROUGH HOLE; Viewing Angle:18 ; Diode Case Style:TO-46; Forward Current If(AV):100mA; Forward Voltage VF Max:1.75V; Rise Time:1 s; Fall Time tf:500ns; Operating Temperature Min:-65 C; Packaging:Each

Hermetic Infrared Emitting Diode

Hermetic Infrared Emitting Diode

Hermetic Infrared Emitting Diode

Plastic Infrared Emitting Diode

Infrared Light Emitting Diode

LED and Photosensor Pari

NPN Silicon Photodarlington

NPN Silicon Photodarlington

TRANSISTOR PHOTO NPN 935NM 1210; Angle of Half Sensitivity ±:25°; Collector Current Typ:1mA; Leaded Process Compatible:Yes; No. of Pins:2; Operating Temperature Max:85°C; Operating Temperature Min:-25°C; Package / Case:1210 ;RoHS Compliant: Yes

PHOTOTRANSISTOR FULL REEL; Wavelength Typ:935nm; Viewing Angle:25 ; Power Consumption:100mW; No. of Pins:2Pins; Packaging:Tape & Reel; Product Range:-; Automotive Qualification Standard:-; MSL:-; Angle of Half Sensitivity :25 ;RoHS Compliant: Yes

OPTOCOUPLER; Wavelength Typ:-; Power Consumption:-; Viewing Angle:-; No. of Pins:2; Packaging:Each; MSL:-; Input Current Max:32mA; Operating Temperature Max:100°C; Operating Temperature Min:-40°C; Output Voltage Max:15V ;RoHS Compliant: Yes

NPN Silicon Photodarlington

OPL563 Series 200 mW 16 V Side Looking Photologic Sensor

NPN Silicon Phototransistor

PHOTOTRANSISTOR PLASTIC T-1; Wavelength Typ:935nm; Viewing Angle:-; Power Consumption:100mW; No. of Pins:2Pins; Transistor Case Style:T-1 (3mm); Packaging:Each; Product Range:-; Automotive Qualification Standard:-; MSL:-; SVHC:No SVHC (17-Dec-2015); Collector Emitter Saturation Voltage Vce(on):0.4V; Current Ic Min:2.15mA; Current Ic Typ:5.95mA; Dark Current:100nA; External Length / Height:4.82mm; External Width:3.05mm; Lead Length:12.7mm; Lead Spacing:2.54mm; Nom Sensitivity @ mW/cm²:2.15mA @ 0.5mW/cm²; Operating Temperature Max:100°C; Operating Temperature Min:-40°C; Operating Temperature Range:-40°C to +100°C; Peak Spectral Response Wavelength:935nm; Power Dissipation Pd:100mW; Storage Temperature Max:100°C; Storage Temperature Min:-40°C; Transistor Polarity:NPN; Transistor Type:NPN; Voltage Vcc:5V

NPN Silicon Phototransistor