Description

MOSFET, DUAL NN SO-8; Transistor Polarity:Dual N Channel; Continuous Drain Current Id:7.9A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.02ohm; Rds(on) Test Voltage Vgs:-; Threshold Voltage Vgs:-; Power Dissipation Pd:2W; Transistor Case Style:SOIC; No. of Pins:8Pins; Operating Temperature Max:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (15-Jan-2018); Cont Current Id N Channel 2:6.5A; Cont Current Id N Channel 3:7.9A; Current Temperature:25°C; Forward Current If(AV):3A; Forward Voltage VF Max:700mV; Full Power Rating Temperature:25°C; No. of Transistors:2; On State Resistance Channel 1:29mohm; On State Resistance N Channel 2:20mohm; Pulse Current Idm:30A; Pulse Current Idm N Channel 2:20A; Pulse Current Idm N Channel 3:30A; SMD Marking:FDS6986S; Voltage Vds N Channel 1:30V; Voltage Vds N Channel 2:30V; Voltage Vgs th Max:3V; Voltage Vgs th Min:1V