Description

MOSFET, N D-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:55A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.011ohm; Rds(on) Test Voltage Vgs:-; Threshold Voltage Vgs:-; Power Dissipation Pd:60W; Transistor Case Style:TO-252; No. of Pins:-; Operating Temperature Max:-; MSL:-; SVHC:No SVHC (15-Jan-2018); Alternate Case Style:D-PAK; Current Id Max:55A; Current Temperature:25°C; Forward Current If(AV):4.4A; Forward Voltage VF Max:700mV; Full Power Rating Temperature:25°C; No. of Transistors:1; Pulse Current Idm:100A; SMD Marking:FDD6680S; Voltage Vgs th Max:3V; Voltage Vgs th Min:1V