Description

Power MOSFET, N-Channel, UniFETTM, 500 V, 16.5 A, 380 m, TO-3P Features: Low Crss (Typ. 20 pF); 100% Avalanche Tested; RoHS Compliant; RDS(on) = 310 m (Typ.) @ VGS = 10 V, ID = 8.3 A; Low Gate Charge (Typ. 32 nC)