Description

10 A, 100 V PNP Darlington Bipolar Power Transistor Features: Low Collector-Emitter Saturation Voltage CE(sat) = 2.5 Vdc (max.) at IC = 3.0 Adc BDX33B, 33C/34B, 34C; Monolithic Construction with Build-In Base-Emitter Shunt resistors; TO-220AB Compact Package; Collector-Emitter Sustaining Voltage at 100 mAdc VCEO(sus) = 80 Vdc (min.) BDX33B, 34B VCEO(sus) = 100 Vdc (min.) - BDX33C, 34C; High DC Current Gain - hFE = 2500 (typ.) at IC = 4.0; Pb-Free Packages are Available