onsemi
Power MOSFET, N-Channel, SUPERFET III, Easy Drive, 650 V, 17 A, 180 m, Power88 Features: Kelvin contact; Ultra Low Gate Charge (Typ. Qg = 33 nC); Low Effective Output Capacitance (Typ. Coss(eff.) = 305 pF); Typ. RDS(on) = 152 m; 100% Avalanche Tested; RoHS Compliant; Internal Gate Resistance: 0.5 ; Moisture Sensitivity Level 1 guarantee; 700 V @ TJ = 150 oC; Leadless Ultra-thin SMD package; Optimized Capacitance