ON Semiconductor
N-Channel Logic-Level Enhancement Mode Field Effect Transistor 30V, 2.2A, 65m Features: Exceptional on-resistance and maximum DC current capability.; High density cell design for extremely low RDS(ON).; 2.2 A, 30 V RDS(ON) = 0.065 @ VGS = 4.5 V RDS(ON) = 0.082 @ VGS = 2.5 V.; Industry standard outline SOT-23 surface mount package using proprietary SuperSOT-3 design for superior thermal and electrical capabilities.