onsemi
Power MOSFET, N-Channel, UniFETTM II, 500 V, 3 A, 2.5 , DPAK Features: RDS(on) = 2.1 ( Typ.)@ VGS = 10V, ID = 1.25A; 100% avalanche tested; Low Crss ( Typ. 2.5pF); ESD improved capability; Low gate charge ( Typ. 6.2nC); Improved dv/dt capability; RoHS compliant