Power MOSFET, N-Channel, UniFETTM, 500 V, 48 A, 105 m, TO-247

Extra-Small, High-Performance, High-Frequency DrMOS Module

Extra-Small, High-Performance, High-Frequency DrMOS Module

N-Channel PowerTrench MOSFET 60V, 60A, 6.5m

N-Channel Power Trench MOSFET 60V, 17.6A, 26m

N-Channel PowerTrench MOSFET 60V, 65A, 5.6m

N-Channel PowerTrench MOSFET 75V, 242A, 2.35m

N-Channel PowerTrench MOSFET 80V, 223A, 2.7m

Power MOSFET, N-Channel, UniFETTM, FRFET, 200V, 18A, 140m, TO-220F

Power MOSFET, N-Channel, UniFETTM, Ultra FRFETTM, 500V, 5A, 1.5, TO-220F

P-Channel 1.8V Specified PowerTrench MOSFET -20V, -13.5A, 8.5 m

P-Channel PowerTrench MOSFET -40V, -11A, 13m

MOSFET, NN; Transistor Polarity:Dual N Channel; Continuous Drain Current Id:9.4A; Drain Source Voltage Vds:20V; On Resistance Rds(on):0.014ohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs:1V; Power Dissipation Pd:2W; Transistor Case Style:SOIC; No. of Pins:8Pins; Operating Temperature Max:150C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018); Continuous Drain Current Id, N Channel:9.4A; Current Id Max:9.4A; Drain Source Voltage Vds, N Channel:20V; Module Configuration:Dual; On Resistance Rds(on), N Channel:0.01ohm; Operating Temperature Min:-55C; Operating Temperature Range:-55C to +150C; Termination Type:Surface Mount Device; Voltage Vds Typ:20V; Voltage Vgs Max:1V; Voltage Vgs Rds on Measurement:4.5V

Dual N-Channel Logic Level PWM Optimized PowerTrench MOSFET 20V, 9.4A, 10m

Small Signal Field-Effect Transistor, 5.5A, 30V, 2-Element, N-Channel, MOSFET

Dual N & P-Channel PowerTrench MOSFET 30V

N-Channel PowerTrench MOSFET 150V, 2A, 228m

N-Channel Power Trench MOSFET 60V, 60A, 8.5m

IGBT, EcoSPARK 300mJ, 560V, N-Channel Ignition

Ignition IGBT, 450V, 23A, 1.3V, 320mJ, DPAKEcoSPARK II, N-Channel Ignition