Description

TRANSISTOR, NPN, SOT-82; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:400V; Transition Frequency ft:-; Power Dissipation Pd:42W; DC Collector Current:500mA; DC Current Gain hFE:50hFE; Transistor Case Style:SOT-82; No. of Pins:3Pins; Operating Temperature Max:150°C; MSL:-; SVHC:No SVHC (27-Jun-2018); Collector Emitter Saturation Voltage Vce(on):800mV; Continuous Collector Current Ic Max:500mA; Current Gain Hfe Max:125; Current Ic Continuous a Max:500mA; Current Ic hFE:50mA; Fall Time @ Ic:0.28µs; Gain Bandwidth ft Typ:20MHz; Hfe Min:26; Hfe Typ:50; Lead Spacing:2.29mm; No. of Transistors:1; Power Dissipation Ptot Max:42W; Termination Type:Surface Mount Device; Voltage Vces:800V