earless flanged ceramic package; 2 leads

LDMOS S-Band radar power transistor

flanged LSMOST ceramic package; 2 mounting holes; 4 leads

LDMOS S-band radar power transistor

N-channel enhancement mode MOS transistor

N-channel enhancement mode field-effect transistor

N-channel enhancement mode vertical D-MOS transistor

P-channel enhancement mode vertical D-MOS transistor

MOSFET N SOT-143; Transistor Polarity:N Channel; Continuous Drain Current Id:50mA; Drain Source Voltage Vds:10V; On Resistance Rds(on):45ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2V; Power Dissipation Pd:230mW; Transistor Case Style:SOT-143; No. of Pins:4Pins; Operating Temperature Max:125°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (17-Dec-2015); Capacitance Ciss Typ:0.6pF; Current Id Max:50mA; Current Temperature:25°C; Full Power Rating Temperature:25°C; No. of Transistors:1; On State resistance @ Vgs = 10V:45ohm; Packaging:Cut Tape; Power Dissipation Ptot Max:230mW; Termination Type:Surface Mount Device; Voltage Vds Typ:10V; Voltage Vgs Max:10V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:2V; Voltage Vgs th Min:0.1V

50 V, 150 mA P-channel Trench MOSFET

50 V, 150 mA P-channel Trench MOSFET

plastic single-ended leaded (through hole) package; 3 leads

plastic single-ended leaded (through hole) package; 3 leads

4Q Triac

4Q Triac

4Q Triac

4Q Triac

4Q Triac

4Q Triac

4Q Triac