Description

TRANSISTOR, DUAL, PNP, SOT-666; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:45V; Power Dissipation Pd:200mW; DC Collector Current:-100mA; DC Current Gain hFE:200hFE; Transistor Case Style:SOT-666; No. of Pins:6Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (15-Jan-2018); Collector Emitter Saturation Voltage Vce(on):-200mV; Current Ic Continuous a Max:100mA; Current Ic hFE:2mA; Gain Bandwidth ft Min:100MHz; Gain Bandwidth ft Typ:175MHz; Hfe Min:200; Module Configuration:Dual; Operating Temperature Min:-65°C; Operating Temperature Range:-65°C to +150°C; Power Dissipation Ptot Max:200mW; Power Dissipation per device Max:300mW; SMD Marking:ED; Transistor Type:General Purpose; Transition Frequency ft:175MHz; Voltage Vcbo:45V