Description

PMN35EN,115 N-Channel MOSFET, 5.1 A, 30 V, 6-Pin TSOP Nexperia. Maximum Drain Source Resistance: 31 mΩ. Maximum Gate Threshold Voltage: 2.5V. Minimum Gate Threshold Voltage: 1V. Maximum Gate Source Voltage: -20 V, +20 V. Mounting Type: Surface Mount. Transistor Configuration: Single. Channel Mode: Enhancement. Maximum Power Dissipation: 4.17 W. Typical Gate Charge @ Vgs: 6.2 nC @ 10 V. Height: 1mm.