Description

PMN20EN,115 N-Channel MOSFET, 6.7 A, 30 V, 6-Pin TSOP Nexperia. Maximum Drain Source Resistance: 31 mΩ. Maximum Gate Threshold Voltage: 2.5V. Minimum Gate Threshold Voltage: 1V. Maximum Gate Source Voltage: -20 V, +20 V. Mounting Type: Surface Mount. Transistor Configuration: Single. Channel Mode: Enhancement. Category: Power MOSFET. Maximum Power Dissipation: 4.17 W. Typical Input Capacitance @ Vds: 630 pF @ 15 V.