Description

MOSFET, N, SO-8; Transistor Polarity:N Channel; Continuous Drain Current Id:4A; Drain Source Voltage Vds:200V; On Resistance Rds(on):0.13ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipation Pd:6.25W; Transistor Case Style:SOIC; No. of Pins:8Pins; Operating Temperature Max:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (15-Jan-2018); Current Temperature:25°C; External Depth:5.2mm; External Length / Height:1.75mm; External Width:4.05mm; Full Power Rating Temperature:25°C; No. of Transistors:1; Pulse Current Idm:16A; Row Pitch:6.3mm; SMD Marking:PHK4NQ20T; Termination Type:Surface Mount Device; Voltage Vds Typ:200V; Voltage Vgs Rds on Measurement:10V