Description

MOSFET, N 30V LFPAK; Transistor Polarity:N Channel; Continuous Drain Current Id:98A; Drain Source Voltage Vds:30V; On Resistance Rds(on):3.2ohm; Rds(on) Test Voltage Vgs:5V; Threshold Voltage Vgs:-; Power Dissipation Pd:62.5W; Transistor Case Style:SOT-669; No. of Pins:-; Operating Temperature Max:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (15-Jan-2018); Current Temperature:25°C; External Depth:6.2mm; External Length / Height:1.2mm; External Width:5mm; Junction Temperature Tj Max:150°C; Junction Temperature Tj Min:-55°C; N-channel Gate Charge:33nC; On State Resistance Channel 1:4ohm; On State Resistance Max:3.8ohm; Pulse Current Idm:290A; Termination Type:Surface Mount Device; Voltage Vgs Max:20V; Voltage Vgs th Min:1V